BSP250,115 datasheet

О ДАТАШИТЕ

Маркировка

BSP250,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BSP250,115 Configuration: Single Dual Drain Continuous Drain Current: 3 A Current - Continuous Drain (id) @ 25?° C: 3A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 2 S, 1 S Gate Charge (qg) @ Vgs: 25nC @ 10V Gate Charge Qg: 10 nC Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951757 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.65W Power Dissipation: 1650 mW Rds On (max) @ Id, Vgs: 250 mOhm @ 1A, 10V Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 2.8V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 0.33 Ohms Forward Transconductance gFS (Max / Min): 2 S, 1 S Factory Pack Quantity: 1000 Part # Aliases: BSP250 T/R Other Names: 934033450115::BSP250 T/R::BSP250 T/R
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12 шт.
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